Oxidation induced stress in SiO2/SiC structures

Li, XY; Ermakov, A; Amarasinghe, V; Garfunkel, E; Gustafsson, T; Feldman, LC

Li, XY (reprint author), Rutgers State Univ, Inst Adv Mat Devices & Nanotechnol, Piscataway, NJ 08854 USA.; Li, XY (reprint author), Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA.

APPLIED PHYSICS LETTERS, 2017; 110 (14):

Abstract

Physical stress in SiO2/SiC stacks formed by the thermal oxidation of SiC is studied experimentally through both room temperature ex-situ and variable......

Full Text Link


Links

期刊讨论 | 中国SCI论文 | 期刊主页 | 投稿经验 | 杂志官网 | 投稿链接 | 作者需知 | PMC链接 | Pubmed全文检索